FDC655BN MOSFET Power Electronics
SOT-23-6 High Voltage Current Switching Ideal Automotive Industrial Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | |
The FDC655BN is a N-channel Power MOSFET from Fairchild Semiconductor, housed in a SOT-23-6 package. It offers a low on-resistance of 0.04Ω, a low threshold voltage of 1.0V, and a high continuous drain current of 2.5A. The FDC655BN offers superior switching performance with a fast switching speed, and is suitable for a wide range of applications.
This device is designed with a maximum junction temperature of 150°C and a rated drain-source breakdown voltage of 30V. It has a low capacitance between gate and source, resulting in low switching losses and improved efficiency. The FDC655BN is ideal for use in battery-powered applications, as its low current consumption allows it to extend the battery life. It is also ideal for use in power management systems and other high speed switching applications.
The FDC655BN is RoHS compliant and features integrated protection features such as over-voltage protection, over-current protection, and short-circuit protection. It also has a built-in overheating protection feature. The FDC655BN is an excellent choice for high-performance, reliable, and cost-effective power solutions.
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